Radical-Assisted Silcore(R)CVD of Si3N4 and SiO2 Nanolaminates

Autor: Fischer, Pamela R., Oosterlaken, Ed, Bozon, Bart, Zagwijn, Peter M.
Zdroj: ECS Transactions; July 2007, Vol. 3 Issue: 15 p61-65, 5p
Abstrakt: The low temperature generation of Si3N4 and SiO2 films, or nanolaminates of these films, has been developed for LPCVD vertical furnaces. These films use silcore(r) chemistry to deposit amorphous silicon films that are subsequently converted to silicon nitride or silicon oxide films via exposure to in-situ radicals. The gas composition during the plasma conversion step is critical for determining the final film properties.
Databáze: Supplemental Index