| Autor: |
Hendrix, Bryan C., Welch, James J., Roeder, Jeffery F., Wang, Ziyun, Xu, Chongying, Stawasz, Michele, Baum, Thomas |
| Zdroj: |
ECS Transactions; September 2007, Vol. 11 Issue: 4 p569-574, 6p |
| Abstrakt: |
Ruthenium films have been deposited via a pulsed CVD process using tris(2,2,6,6-tetramethyl-3,5-heptanedionato) ruthenium (i.e., Ru(thd)3) , oxygen, and hydrogen at 280 and 300{degree sign}C. Film resistivity near theoretical values (16 uO-cm at 3 nm) was achieved with repeatability. Films were smooth and continuous down to 2 nm; a low density of pinholes could be observed on films with 1 nm thickness. Adhesive tape tests indicated good adhesion. Carbon content is low. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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