| Autor: |
Goessens, Claus, Martens, Nick, Baele, Joris, Backer, Eddy De, Pestel, Freddy De, Engle, Mike |
| Zdroj: |
ECS Transactions; September 2007, Vol. 11 Issue: 2 p275-282, 8p |
| Abstrakt: |
During failure analysis on high voltage I3T50 products, it was found that irregular Nsinker regions were present in the top region of the wafer. This Nsinker distortion, also called POCl3 deformation, was shown during failure analysis to be linked to certain binnings within the yield loss. A decoration technique has been developed to detect POCl3 deformations inline with KLA, and it is shown that drying marks in trenches in the Deep Trench Isolation (DTI) module are the root cause of POCl3 deformation. An improved drying technique has been put in place, thus preventing the defects observed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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