| Autor: |
Wang, Gang, Leys, Frederik E., Souriau, Laurent, Loo, Roger, Caymax, Matty, Brunco, David P., Geypen, Jef, Bender, Hugo, Meuris, Marc, Vandervorst, Wilfried, Heyns, Marc M. |
| Zdroj: |
ECS Transactions; October 2008, Vol. 16 Issue: 10 p829-836, 8p |
| Abstrakt: |
Ge selective epitaxial growth (SEG) in shallow trench isolated windows is of great interest in advanced devices due to the good lateral electrical isolation of shallow trenches and the possibility of integrating Ge on Si wafers. However, the high density of threading dislocations in strain-relaxed Ge layers and facet formation are two major concerns in Ge SEG. In this work, we have obtained facet-free growth of Ge in shallow trench isolated Si windows with a threading dislocation density (TDD) of 4.2x108 cm-2. A mass transport model is developed to simulate the Ge faceting and the factors influencing the Ge deposition selectivity are studied. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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