| Autor: |
Druzhynin, Anatolij, Holota, Victor, Kohut, Igor, Sapon, Sergij, Khoverko, Yurij |
| Zdroj: |
ECS Transactions; August 2008, Vol. 14 Issue: 1 p569-580, 12p |
| Abstrakt: |
The two methods of the formation of the silicon-on-insulator (SOI) local structures have been proposed. The first one is based on the stimulated lateral epitaxial growth and planarization of Si mono-crystal film. The second one is based on local thermal oxidation of Si buried layer through horizontal tunnels. The obtained SOI-structures are used in a base matrix crystal fabrication technology for the construction of micro-systems. It is proposed to add to elements of a base crystal of a matrix of cells of field emission micro-cathodes with control circuits. The fabrication technology and the layout of a field emission micro-cathode cell with control high-voltage SOI MOS-transistor has been developed. The computer simulation of high-voltage SOI MOS-transistor static characteristics has been performed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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