| Autor: |
Kramer, Mark, Karouta, Fouad, Kwaspen, J J., Rudzinski, Marius, Larsen, Poul K., Suiker, Erwin M., De, Peter A., Rodle, Thomas, Volokhine, Iouri, Kaufmann, Leon M. |
| Zdroj: |
ECS Transactions; October 2008, Vol. 16 Issue: 7 p169-179, 11p |
| Abstrakt: |
We present radio-frequency (RF) power results of GaN-based high electron mobility transistors (HEMTs) with total gate widths (Wg) up to 1 mm. The AlGaN/GaN epi-structures are MOVPE-grown on 2-inches semi-insulating (s.i.) 4H-silicon carbide substrates. The HEMTs have been fabricated using an optimized process flow comprising a low-power Ar-based plasma after ohmic contact metallization, cleaning of the AlGaN surface prior to the Schottky gate metallization using a diluted ammonia (NH4OH) solution, and passivation of the AlGaN surface using a silicon nitride layer deposited by plasma enhanced chemical vapor deposition. We will show that the best RF power performance has been achieved by HEMTs with iron-doped GaN buffer layers (GaN:Fe). Devices with a total gate width of 1 mm yielded a maximum output power of 11.9 W at S-band (2 - 4 GHz) under class AB bias conditions (VDS = 40 - 60 V, and VGS = -4.65 - - 4.0 V). |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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