| Autor: |
Li, Yunlong, Heylen, Nancy, Delande, Tinne, Kellens, Kristof, Ong, Patrick, Leunissen, Leonardus, Tarnowka, Alexandre, Eliyahu, Aviv |
| Zdroj: |
ECS Transactions; March 2009, Vol. 18 Issue: 1 p453-458, 6p |
| Abstrakt: |
We investigated a wafer level Cu/low-k thickness measurement technique and compared it to the electrical and surface profiling techniques. With this optical technique, we can achieve a comprehensive within-die and within-wafer Cu/low-k thickness monitoring which allows for a more accurate Cu CMP process control in advance Cu/low-k damascene structures. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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