| Autor: |
Beshkov, Georgi, Nedev, Nikola, Spassov, Dencho, Terrazas, Juan, Salas, Benjamin V., Krastev, Veselin |
| Zdroj: |
ECS Transactions; September 2009, Vol. 25 Issue: 8 p845-851, 7p |
| Abstrakt: |
In this work IR and EDX spectra, SEM micrographs as well as etching rates of silicon nitride films deposited by different Chemical Vapor Deposition (CVD) processes are presented. SiNx layers were obtained by Atmospheric Pressure CVD (APCVD), Low Pressure CVD (LPCVD), Micro Pressure CVD (uPCVD) and Plasma Enhanced CVD (PECVD). BNx films fabricated by Rapid Thermal Process (RTP) are also studied. The nitride films were deposited under optimal technological conditions for each type of industrial reactor system. The positions of the IR peaks and nitrogen concentration of investigated in this work dielectric films depend on performed method of deposition. A correlation between the nitrogen concentration and the etching rate was found. BNx layers with ratio B/N close to stoichiometric (0.75) were obtained at 1400o C for 180 s. |
| Databáze: |
Supplemental Index |
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