| Autor: |
Galicka, Karolina, Andrieux, Michel, Legros, Corinne, Herbst, Michaele, Gallet, Isabelle, Brunet, Magali, Scheid, Emmanuel, Schamm, Sylvie |
| Zdroj: |
ECS Transactions; September 2009, Vol. 25 Issue: 8 p1121-1128, 8p |
| Abstrakt: |
Zirconia films are already used as thermal barrier, sensors and fuel cells and have great potential for electronic applications in particular as a dielectric in high density filter capacitors in future micro DC-DC converters. In this context, the SiO2/Si3N4 standard dielectric was replaced by ZrO2 (e = 25-40) in 2D and 3D MIS (Metal-Isolator-Semiconductor) structures. Zirconia thin layers (100nm) were deposited between 550{degree sign}C and 700{degree sign}C on Si(100) planar substrates and inside pores etched in Si(100) by direct liquid injection MOCVD from Zr2(OiPr)6(thd)2 precursor and annealed at 900{degree sign}C to check phase stability. As-deposited films exhibit a cubic/tetragonal structure that was identified by DRX and FT-IR. The electric properties on specific samples were measured and discussed. After annealing, phase transformation occurs in the film, from cubic/tetragonal structure to a tetragonal/monoclinic one, depending on the deposition parameters. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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