| Autor: |
Simoen, Eddy R., Verheyen, Peter, Loo, Roger, Bauer, Matthias, Thomas, Shawn |
| Zdroj: |
ECS Transactions; September 2009, Vol. 25 Issue: 7 p193-200, 8p |
| Abstrakt: |
A study is made of the impact of embedded epitaxial Si:C source/drain regions on the DC and low-frequency (LF) noise characteristics of nMOSFETs with 1.4 nitrided oxide gate dielectric. It is shown that a ~10% improvement in ION is achieved for a C concentration of 1%, with not much further improvement going to 1.5%. At the same time, no change of the 1/f noise is observed, indicating that the gate stack integrity is preserved throughout the Selective Epitaxial Growth process. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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