| Autor: |
Sung, Taek, Jeong, Mi Ra, Mun, Nan Ju, Kil, Ho, Kim, Di, Soo, Tae, Kang, Sukil, Hoon, Sang, Choi, Jong, Shim, Hwan |
| Zdroj: |
ECS Transactions; September 2009, Vol. 25 Issue: 3 p263-269, 7p |
| Abstrakt: |
We have investigated the characterization of SiGe/Si quantum dot (QD) structures grown directly onto Si (001) substrates using atmospheric pressure reduced pressure chemical vapor deposition (APRPCVD) system in an ASM Epsilon One. The structural properties of the SiGe/Si QD were investigated using X-ray diffraction (XRD), SEM and TEM. The optical properties of the SiGe/Si QD were investigated using Raman spectroscopy and photocurrent (PC) measurement. The transition peaks related to the QD region observed in the PC spectrum were preliminarily assigned to electron-heavy hole (e-hh) and electron-light hole (e-lh) transitions. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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