| Autor: |
Vos, Ingrid, Hellin, David, Vrancken, Christa, Geypen, Jef, Bender, Hugo, Vecchio, Guglielma, Paraschiv, Vasile, Vertommen, Johan, Boullart, Werner |
| Zdroj: |
ECS Transactions; September 2009, Vol. 25 Issue: 5 p29-36, 8p |
| Abstrakt: |
A dry-wet patterning process for La2O3/HfO2-containing high-k/ metal gate stacks was successfully developed. The process meets the stringent requirements of complete removal of the high-k layers and metal-containing sidewall residues without inducing silicon recess or undercut. The interaction between the dry etch and wet clean steps was studied. Use of a BCl3-based plasma process facilitated the cleaning process as it damages and modifies the high-k layers in the active area. When the dry etch process ends with a BCl3-step, La-containing residues were formed inhomogeneously over the wafer within the time scale of hours. These residues could no longer be removed with a wet clean, but were not observed when the dry etch and wet clean processes were integrated. This demonstrates that an integrated etch-clean process enlarges the process window. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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