| Autor: |
Giroldo, Jorge, Bellodi, Marcello |
| Zdroj: |
ECS Transactions; April 2010, Vol. 28 Issue: 4 p119-129, 11p |
| Abstrakt: |
This paper will show the drain leakage current (IDLeak) behavior in SOI Multiple-Gate devices (MuGFET) for double-gate (DGFinFET) and triple-gate (TGFinFET) configurations, operating since room temperature up to 300degC. Through three dimensional (3D) numerical simulations results is observed that IDLeak is composed mainly by electrons for all devices operating at same conditions. Besides it, lower IDLeak values are observed for all TGFinFET, when compared to DGFinFETs, analyzed in this investigation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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