| Autor: |
Armini, Silvia, Wilson, Chris J., Moussa, Alain, Franquet, Alexis, Vanstreels, Kris, Atanasova, Tanya, Radisic, Alex, Civale, Yann, Van, Annemie, El, Zaid, Bryce, George, Ruythooren, Wouter |
| Zdroj: |
ECS Transactions; October 2010, Vol. 28 Issue: 29 p77-87, 11p |
| Abstrakt: |
The results of a wet alkaline seed deposition process directly on barrier layers or thin adhesion promoter films, such as CVD Co are presented. This solution has been successfully used for copper plating on blanket and patterned Though Silicon Via (TSVs) wafers covered with either silicon oxide/PVD Ta(N)/CVD Co or silicon oxide/PVD Ti/CVD Co stacks. Such direct plated films were used as seed layers for subsequent copper plating from a conventional sulfuric acid electroplating bath. The effect of the plated stack composition and thicknesses, processing waveform and applied current on the plating rate and morphology of the deposited copper has been investigated. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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