| Autor: |
Yamashita, Tenko, Basker, Veeraraghavan, Standaert, Theodorus, Yeh, Chen, Faltermeier, Johnathan, Yamamoto, Toyoji, Lin, hsun, Bryant, Andres, Maitra, Kingsuk, Kulkarni, Pranita, Kanakasabapathy, Sivananda, Sunamura, Hiroshi, Wang, Junli, Jagannathan, Hemanth, Inada, Atsuro, Cho, Jin, Miller, Robert, Doris, Bruce, Paruchuri, Vamsi, Bu, Huiming, Khare, Mukesh, O, James, and, Neill, Leobandung, Effendi |
| Zdroj: |
ECS Transactions; March 2011, Vol. 34 Issue: 1 p81-86, 6p |
| Abstrakt: |
FinFET is a promising device candidate for 14nm node CMOS technology. We have developed FinFET device showing superior short channel control at 25nm gate length. This FinFET device featuring gate first high-k/metal gate and merged Epi source/drain process. Key process improvements to resolve the FinFET unique challenges are presented. High drive currents have been obtained for both nFET and pFET. All these results show FinFET is the most promising candidate for 14nm node CMOS technology. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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