| Autor: |
Nagaiah, Padmaja, Tokranov, Vadim, Yakimov, Michael, Madisetti, Shailesh, Greene, Andrew, Novak, Steven, Moore, Robert, Bakhru, Hassaram, Oktyabrsky, Serge |
| Zdroj: |
ECS Transactions; October 2011, Vol. 41 Issue: 3 p223-230, 8p |
| Abstrakt: |
Electrical and structural properties of GaSb metal-oxide-semiconductor capacitors with in-situ deposited HfO2 gate dielectric and in-situ deposited amorphous silicon interface passivation layer are presented. Capacitance-voltage characteristics with low C-V stretch out, reduced hysteresis, lower EOT is obtained in a temperature range of 3500C-5500C post deposition annealing in forming gas. The gate leakage current of the gate stack was [?] 1uA/cm2. p-MOSFETs fabricated on epitaxially grown strained (In)GaSb quantum channel (e=1.6%) channels using this all in-situ high-k gate stack showed a maximum ION=23mA/mm for a 3um gate length device |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
