| Autor: |
Van, Sven, Delabie, Annelies, Dewilde, Sven, Meersschaut, Johan, Swerts, Johan, Tielens, Hilde, Verdonck, Patrick, Witters, Thomas, Vancoille, Eric |
| Zdroj: |
ECS Transactions; October 2011, Vol. 41 Issue: 2 p25-32, 8p |
| Abstrakt: |
To achieve very low permittivity values, advanced generations of low-k dielectrics for interconnects have a porous structure. Precursor penetration during metal barrier deposition by atomic layer deposition needs to be avoided not to degrade the low-k material properties. In this paper, we compare various options to seal a highly porous low-k material with a k-value of 2.0 against penetration during TaN ALD. This includes the exploration of a higher deposition temperature, the use of additional sealing layers, and the introduction of a short PVD Ta flash exposure prior to ALD. Depending on the technique used, pore penetration can be quasi completely avoided. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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