| Autor: |
Tiwari, Chandra S, Guo, Tony, Breyfogle, Chris, Zhang, John, Mitro, Henis, Olmer, Len, Pohlman, Doug |
| Zdroj: |
ECS Transactions; April 2013, Vol. 50 Issue: 38 p1-8, 8p |
| Abstrakt: |
The formation of CMOS transistors requires the integration of several steps including deposition, annealing, cleaning, and patterning. This paper investigates the nature of the interface between amorphous silicon (a-Si) and silicon nitride (Si3N4), and its impact on the gate breakdown voltage. It has been found that a continuous native oxide between a-Si and Si3N4 is critical in preventing the agglomeration of silicon during high temperature annealing. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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