| Autor: |
Ishizuka, Masatoshi, Tsuji, Etsushi, Aoki, Yoshitaka, Hyono, Atsushi, Ohtsuka, Toshiaki, Sakaguchi, Norifumi, Nagata, Shinji, Habazaki, Hiroki |
| Zdroj: |
ECS Transactions; April 2013, Vol. 50 Issue: 43 p245-254, 10p |
| Abstrakt: |
The sputter-deposited Zr-Si-Y film was anodized to form a high capacitance composite anodic film, comprising a tetragonal ZrO2 nanocrystalline phase and a silicon-enriched amorphous phase. It was found that the nanocomposite anodic film, as well as the yttrium-free ZrO2-SiO2 anodic film, showed markedly increased capacitance compared with the anodic film ZrO2 film on zirconium. The incorporation of yttrium species to the anodic ZrO2-SiO2 film did not change the thickness and permittivity of the anodic oxide film, although a thicker anodic film was formed on zirconium by the incorporation of yttrium, which may introduce oxygen vacancies in the crystalline ZrO2. The findings suggest that in the composite ZrO2-SiO2 anodic films the film thickness is mainly controlled by the silicon-enriched amorphous phase. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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