| Autor: |
Regina, Katia, Sasaki, Akemi, Nissimoff, Albert, Mendes, Luciano, Aoulaiche, Marc, Simoen, Eddy, Claeys, Cor, Antonio, Joao |
| Zdroj: |
ECS Transactions; May 2013, Vol. 53 Issue: 5 p139-146, 8p |
| Abstrakt: |
This paper analyzes semiconductor film bandgap engineering as a way of prolonging 1T-FBRAM retention times. About 5 orders of magnitude longer is obtained for the highest bandgap considered, due to lower 0-state degradation during holding and reading. This allows achieving values close to the specification of standalone DRAM. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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