| Autor: |
Lohn, Andrew J, Stevens, James E, Mickel, Patrick R, Hughart, David R, Marinella, Matthew J. |
| Zdroj: |
ECS Transactions; August 2013, Vol. 58 Issue: 5 p59-65, 7p |
| Abstrakt: |
Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. We demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1x105 cycle endurance. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
