| Autor: |
Gabette, Laurence, Kachtouli, Riadh, Segaud, Roselyne, Besson, Pascal |
| Zdroj: |
ECS Transactions; February 2014, Vol. 58 Issue: 17 p47-58, 12p |
| Abstrakt: |
This study focuses on the copper seed layer wet etch for 3D Integration. Indeed, designs such as Redistribution Layer or copper Pillars involved in advanced packaging commonly use copper seed layer to permit copper ECD growth. In order to isolate patterns, the copper seed layer needs to be totally removed with a controlled undercut. The copper wet etch chemistry and kinetic are studied on blanket wafers together with patterned wafers. The impacts of wet etch on ECD copper such as roughness and copper loss are quantified. A specific issue resulting in a random defectivity on Cu-SnAg bumps is described and a containment solution is given. Finally, impact of pattern density on seed layer etch rate is investigated. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
