| Autor: |
Nelson, Shelby F., Ellinger, Carolyn R., Tutt, Lee W. |
| Zdroj: |
ECS Transactions; August 2014, Vol. 64 Issue: 9 p73-83, 11p |
| Abstrakt: |
We have used spatial atomic layer deposition (SALD) to fabricate metal oxide thin-film devices with unusually simple processes. Selective area deposition allows us to fabricate transistors and circuits additively and with digital design variations when used in combination with an inkjet-printed inhibitor. In a second approach, we use the conformal nature of SALD films to produce self-aligned sub-micron channel length vertical transistors that have large alignment tolerances and are suitable for high-performance thin-film electronics. We discuss device design considerations for both architectures. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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