| Autor: |
Schwarzenbach, Walter, Figuet, Christophe, Delprat, Daniel, Veytizou, Christelle, Huyet, Isabelle, Tempesta, Catherine, Ecarnot, Ludovic, Widiez, Julie, Loup, Virginie, Hartmann, Michel, Besson, Pascal, Deguet, Chrystel, Mazen, Frederic, Nguyen, Yen, Maleville, Christophe |
| Zdroj: |
ECS Transactions; March 2015, Vol. 66 Issue: 4 p31-37, 7p |
| Abstrakt: |
sSOI & SiGeOI substrates have already demonstrated their potential to support digital advanced technology performance roadmap, and are consequently considered in Soitec product roadmap for 10nm technology nodes and beyond. Smart-Cut(r) process has already demonstrated its benefit to transfer high quality strain silicon and/or SiGe layer from a donor. This paper will show for the first time the results achieved on a 300mm SiGeOI material with high germanium content. Beyond current crystal quality & active layer uniformity, next development will focus on dislocation and surface defect densities improvement. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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