| Autor: |
Vincent, Minh, Fenouillet, Claire, Hartmann, Michel, Rodriguez, Philippe, Benevent, Veronique, Samson, Pierre, Previtali, Bernard, Tabone, Claude, Casse, Mikael, Allain, Fabienne, Romano, Giovanni, Brunet, Laurent, Batude, Perrine, Skotnicki, Thomas, Vinet, Maud |
| Zdroj: |
ECS Transactions; August 2016, Vol. 75 Issue: 8 p51-58, 8p |
| Abstrakt: |
In order to enable 3D sequential CoolCubeTM integration, low temperature epitaxy of raised sources and drains below 500degC is required. However, bad surface preparation and degradation of the epitaxial layer quality are then issues that need to be addressed. In this work, we first study different combinations of thermal, wet and dry surface preparation in order to find an optimum sequence. Then, we present for the first time the integration of SiGe:B raised sources and drains grown at 500degC in p-type FDSOI MOSFETs. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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