| Abstrakt: |
In this paper, we will present the Qorvo's 90nm GaN technology imbedded within Qorvo's existing 3-Metal-Interconnect (3MI) MMIC process flow, for V/W-band high power amplifier (HPA) applications. By applying an advanced epitaxial material structure, dedicated T-gate configuration and process refinement, as well as 50 um SiC substrate with Individual Source Via (ISV) field-effect transistor (FET) construction, this technology demonstrates GaN FET devices with >145GHz Ft and >1000mS/mm Gm, enables circuit designers to utilize this technology to pursue millimeter-wave market opportunities. A record high small signal gain of 9.5dB has been demonstrated at 95GHz on pre-matched FET devices. At MMIC level, a 4-stage 95GHz HPA and a 4-stage 95GHz Driver Amplifier (DA) have been demonstrated. The HPA achieves greater than 30 dB small signal gain, greater than 18 dB power gain and 1.2W output power, while DA achieves greater than 28 dB small signal gain, greater than 23 dB power gain and 400mW output power. |
