| Autor: |
Mehta, Sanjay, Sheng, Haifeng, Krishnan, Rishikesh, Haran, Bala, Han, Tao, Bayindir, Zeynel, Berardi, Marc, Yatzor, Brett, Liu, Jinping, Shepard, Joseph, Grunow, Stephan |
| Zdroj: |
ECS Transactions; June 2018, Vol. 85 Issue: 13 p717-728, 12p |
| Abstrakt: |
Broad band Ultraviolet (UV) radiation of spin coated PerHydroPolySilazane (PHPS) films prior to steam anneal is shown to improve density of final SiO2 inside high aspect ratio (> 7:1) gap fill structure. Post-steam anneal wet etch rate improvements of up to 18% in blanket films and up to 26% in the [?] 7:1 aspect ratio gap fill structure have been obtained for UV treated films relative to control (steam annealed only films). UV dose plays a critical role in determining the final film densification. However, PHPS film becomes moisture sensitive post-UV exposure. The UV treated films show instability in presence of moisture and react/self-convert into SiO2. The rate of moisture absorption and conversion depend on the UV dose and the Q time between UV and steam anneal. Presence of moisture adversely impacts the final wet etch rate of the oxide. Careful choice of UV dose and implementation of Q time between UV and steam anneal are critical to get full entitlement from UV. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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