| Autor: |
Kurosawa, Masashi, Imai, Yukihiro, Iwahashi, Taisei, Takahashi, Kouta, Sakashita, Mitsuo, Nakatsuka, Osamu, Zaima, Shigeaki |
| Zdroj: |
ECS Transactions; July 2018, Vol. 86 Issue: 7 p321-328, 8p |
| Abstrakt: |
This manuscript presents thermoelectric properties of undoped, Sb-doped, and Ga-doped Ge-rich Ge1[?]xSnx (x: 0[?]0.12) layers grown on either Si(001), Ge(001), GaAs(001), or SiO2 substrates. It is found that decreasing of the lateral correlation length in the Ge1[?]xSnx (to less than 10 nm) and increasing of the Sn content (to more than 5%) is an effective method to reduce the thermal conductivity, enabling high-performance thermoelectric generators. Specifically, an extremely low thermal conductivity of 1.4 Wm[?]1K[?]1 was obtained for an Sb-doped Ge0.94Sn0.06 layer on Si(001), which value is 4% of that for Ge bulk. We found that p- and n-type polycrystalline Ge1[?]xSnx layers possess almost same power factor with epitaxial Ge1[?]xSnx layers. Heavy doping technique by using pulsed laser annealing in water is also discussed. |
| Databáze: |
Supplemental Index |
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