| Autor: |
Nishimura, Michiharu, Kawashita, Kazuki, Ishikawa, Yasuhiko |
| Zdroj: |
ECS Transactions; July 2018, Vol. 86 Issue: 7 p3-10, 8p |
| Abstrakt: |
Strained SiGe overlayers are studied as a stressor to engineer the direct bandgap of mesa-shaped Ge in terms of the control of operation wavelengths in Ge photonic devices on Si. Two types of SiGe epitaxial overlayers on Ge, i.e., Si0.2Ge0.8 with a built-in tensile stress and Si0.8Ge0.2/Si with a built-in compressive stress, are examined. Photoluminescence spectra from mesa-shaped Ge with the width less than 10 um reveal blue and red shifts in the direct-gap light emission peak, depending on the built-in stress in the SiGe overlayer. The result suggests that strained SiGe overlayers act as the stressors for the band engineering of Ge photonic devices. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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