| Autor: |
Komago, Shota, Murakami, Tatsumi, Yoshioka, Kazutoshi, Yokogawa, Ryo, Borland, John O, Kuroi, Takashi, Tabata, Toshiyuki, Huet, Karim, Horiguchi, Naoto, Ogura, Atsushi |
| Zdroj: |
ECS Transactions; July 2018, Vol. 86 Issue: 7 p59-65, 7p |
| Abstrakt: |
SiGe channel is widely used because carrier mobilities of SiGe arehigher than those of Si. C or Ge ion implantation in the source/drainregion is expected to be effective to induce tensile or compressivestrain, respectively, in the SiGe channel. Laser annealing enables toremove lattice damage efficiently with minimum thermal budget. Inthis study, laser-annealed SiGe thin layers with and without C or Geimplantation were evaluated by Raman spectroscopy and X-rayPhotoelectron Spectroscopy (XPS). We demonstrated the effect ofC or Ge implantation as well as Ge redistribution by the laserannealing on the Raman peak shift. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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