| Autor: |
Cui, Yubo, Helou, Assaad El, Raad, Peter E. |
| Zdroj: |
ECS Transactions; April 2019, Vol. 89 Issue: 5 p11-16, 6p |
| Abstrakt: |
GaN HEMT devices with source-connected field-plates are characterized thermally to quantify their performance. A Thermoreflectance approach is used to obtain surface temperature maps of the unobstructed GaN junction areas. Different temperature behaviors on different power levels are found. In addition, a 3D thermal model is used to simulate the temperature distribution of the device. The simulation results show good correspondence with the experimental data. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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