| Autor: |
Kim, Jeehwan, Bedell, Stephen W., Maurer, Siegfried L., Loesing, Rainer, Sadana, Devendra K. |
| Zdroj: |
Electrochemical and Solid State Letters; January 2010, Vol. 13 Issue: 1 pH12-H15, 4p |
| Abstrakt: |
One of the greatest challenges in fabricating a Ge-channel n-MOSFET is achieving a high n-type dopant activation within the source and drain regions. Conventional approaches to increase the electrically active doping level have been proven to be unsatisfactory, and typically the highest activation of n-type dopants is using phosphorus. This article describes a method to enhance the activation level of n-type dopants in Ge. Coimplantation of phosphorus and antimony leads to dopant activation over at . The enhancement of n-type dopant activation is attributed to reducing the implantation damage upon annealing due to increase in solid solubility of the dopants. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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