| Autor: |
Kumar, Mihir, Ghosh, Saptarsi, Das, Subhashis, Biswas, Dhrubes |
| Zdroj: |
ECS Solid State Letters; January 2015, Vol. 4 Issue: 12 pP98-P101, 4p |
| Abstrakt: |
Comprehensive Raman and room temperature Photoluminescence experiments are carried out to analyze components of bandgap emission of Molecular Beam Epitaxy (MBE) grown heavily doped n-type thick hexagonal Gallium Nitride (GaN) layers. Based on these analyses, a new theoretical model has been developed to determine bandgap of both degenerate and non-degenerate semiconductor materials. Furthermore, the developed model is also applied to determine the bandgap shift of Silicon and Gallium Arsenide materials. The model has been validated with wide range of experimental and reported results. Also, limitations of different reported theoretical models have been investigated. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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