| Autor: |
Ma, Sheng-Xiang, Liu, Xiao-Long, Sun, Hai-Bin, Zhao, Yang, Hu, Yue, Ning, Xi-Jing, Zhao, Li, Zhuang, Jun |
| Zdroj: |
Journal of the Optical Society of America B: Optical Physics; March 2020, Vol. 37 Issue: 3 p730-735, 6p |
| Abstrakt: |
Co-hyperdoped silicon is fabricated on single crystalline Si substrate by using femtosecond-laser pulses in a mixed gas of ${{\rm SF}_6}$SF_6 and ${{\rm NF}_3}$NF_3 with different ratios. With the increase of the proportion of ${{\rm NF}_3}$NF_3 in the mixed gas, the co-hyperdoped silicon shows increased crystallinity but decreased sub-bandgap absorption. Photodetectors are fabricated based on these samples without high-temperature thermal annealing. With the increase of the proportion of ${{\rm NF}_3}$NF_3, the photoelectric response first increases and then decreases. Photodetectors based on the co-hyperdoped (${{\rm NF}_3}/{{\rm SF}_6}$NF_3/SF_6, 35/35 kPa) material without high-temperature thermal annealing demonstrate high performance on photoresponsivity (${6}\;{\rm A}\;{{\rm W}^{ - 1}}@{ - 5}\;{\rm V}$6AW^−1@−5V for 1050 nm), which is an order of magnitude higher compared with the photodetector made from S-hyperdoped silicon. The photoconductive gain accounts for the high responsivity. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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