| Autor: |
Ye, Zheng, Nitta, Shugo, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi |
| Zdroj: |
Japanese Journal of Applied Physics; February 2020, Vol. 59 Issue: 2 p025511-025511, 1p |
| Abstrakt: |
The decomposition of trimethylgallium (Ga(CH3)3) was examined under H2 and N2 atmospheres using a high-resolution (about 0.002 u) time-of-flight mass spectrometry system, which enabled the separation of N2 and ethene (C2H4) signals. Under H2 atmosphere, the main decomposition product was methane (CH4) formed by the hydrogenolysis of Ga(CH3)3. However, under N2 atmosphere, the main product is ethane (C2H6) at temperature lower than 660 degC. Above 660 degC, the C2H6 further decomposes into CH4, acetylene (C2H2) and C2H4, and the main components in the gas phase are C2H2 and C2H4 above 1000 degC. Since these are effective carbon dopants, the molar ratio of H2 to the Ga(CH3)3 raw material in the carrier gas should be maintained above 300 to inhibit the formation of hydrocarbons in N2. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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