| Autor: |
Hiraoka, Mizuho, Endoh, Yuki, Osawa, Koki, Kishimoto, Naoyuki, Hayashi, Takuya, Machida, Ryuto, Watanabe, Issei, Yamashita, Yoshimi, Hara, Shinsuke, Gotow, Takahiro, Kasamatsu, Akifumi, Endoh, Akira, Fujishiro, Hiroki I. |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; February 2020, Vol. 217 Issue: 3 |
| Abstrakt: |
Unstrained Ga1–xInxSb quantum well (QW) channel using strained‐Al0.40In0.60Sb/Al1–yInySb stepped buffer layer grown on GaAs (100) substrate is investigated. Ga1–xInxSb QW is lattice‐matched to the Al1–yInySb lower buffer layer. Sheet electron density (Ns) of Ga1–xInxSb QW is about twice that of InSb one. Electron mobility (μ) increases with increasing In content xof Ga1–xInxSb. Unstrained Ga0.22In0.78Sb QW channel using strained‐Al0.40In0.60Sb/Al0.25In0.75Sb stepped buffer has Nsof 2.05 × 1012cm−2and μof 15 500 cm2V−1s−1. Compared with the InSb QW channel, Nsincreases by a factor of 193% and μdecreases to 87%. Consequently, the sheet resistance decreases to 59%. These results indicate that the unstrained Ga1–xInxSb QW channel using strained‐Al0.40In0.60Sb/Al1–yInySb stepped buffer is effective to improve the electron transport properties. Unstrained Ga1–xInxSb quantum well (QW) channel using strained‐Al0.40In0.60Sb/Al1–yInySb stepped buffer layer is investigated. The Ga1–xInxSb QW is lattice‐matched to the Al1–yInySb lower buffer layer. The Te‐δ‐doped Al0.40In0.60Sb barrier layer is grown on the Ga1–xInxSb QW. Sheet electron density (Ns) of Ga1–xInxSb QW is about twice that of InSb one. Thus, increasing Nswhile keeping relatively high electron mobility is successful. |
| Databáze: |
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