| Autor: |
Lin, Tzu-Ying, Khatri, Ishwor, Matsuura, Junpei, Shudo, Kosuke, Huang, Wei-Chih, Sugiyama, Mutsumi, Lai, Chih-Huang, Nakada, Tokio |
| Zdroj: |
Nano Energy; February 2020, Vol. 68 Issue: 1 |
| Abstrakt: |
Heavy alkali metal treatment is a key factor to approach high efficiency in Cu(In, Ga)Se2(CIGS) solar cells. Here, we show that the Cs-induced surface modification on CIGS thin-film solar cells, especially on grain boundary reconstruction generated from cesium fluoride post-deposition treatment (CsF-PDT). The CsInSe2phase can be synthesized by CsF-PDT process without extra assistant species, and specifically favors grain boundaries (GBs), which was further characterized by FE-EPMA, TEM, and SIMS analysis. The Cs-contained GBs may both create the valence-band downshift and conduction-band upward. By controlling the Cs-contained layer thickness and modifying absorber, the spike at conduction-band can be overcome by tunneling while remaining high valence-band downshift to suppress the GBs recombination. The efficiency was improved from 15.1 to 18.3% after CsF-PDT; the voltage loss of Eg/q–Vocwas down below 0.4 V. Those improvements are mainly contributed from the grain boundary reconstruction at the junction area using CsF-PDT to reduce the recombination. |
| Databáze: |
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