Superbroadband high-power superluminescent diode emitting at 920 nm

Autor: Mamedov, D.S., Prokhorov, Valery V., Yakubovich, S.D.
Zdroj: Quantum Electronics; June 30, 2003, Vol. 33 Issue: 6 p471-473, 3p
Abstrakt: The physical parameters of superluminescent diodes (SLDs) based on a single-layer quantum-well heterostructure with the (InGa)As active layer and a graded-index waveguide are studied. The power at the output of a single-mode fibre aligned with respect to the diode was 1 — 10 mW in the regime of spatially homogeneous injection depending on the length of the SLD active channel. The width of the emission spectrum was 100 — 110 nm, corresponding to the coherence length 7.6 — 8.8 m.
Databáze: Supplemental Index