| Autor: |
Hanini, Faouzi, Bouabellou, Abderrahmane, Bouachiba, Yassine, Taabouche, Adel, Kermiche, Fouad, Mahtali, Mohamed, Daas, Zahia |
| Zdroj: |
Diffusion and Defect Data Part A: Defect and Diffusion Forum; September 2019, Vol. 397 Issue: 1 p59-68, 10p |
| Abstrakt: |
Undoped and indium (In) doped TiO2 thin films were deposited by sol-gel method onto glass substrates. Structural, optical and electrical properties of films were studied. X-rays diffraction patterns showed that the TiO2 films consist of anatase phase. AFM images revealed that the surface roughness of In:TiO2 films is smoother than that of undoped TiO2 films. UV–Vis transmittance results showed TiO2 films have significant optical absorption in the region of 300–350 nm and are fully transparent in the visible. Both film thickness and refraction index in dependence on the fraction of In doping are derived from TE and TM optical guided modes excited in a prism coupler. The optical gap Eg decreases from 3.50 eV for undoped TiO2 film to 3.43 eV at 2 at.% In doping and then increases for doping with indium at 10 at.%. The electrical characterization shows a maximum electrical conductivity of 2.7 (S/cm) obtained for the film doped with 10 at.% In. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
