| Autor: |
Vigil-Galán, Osvaldo, González-Castillo, Jesús Roberto, Macias, Marcos, Cruz-Orea, Alfredo, Pulgarín-Agudelo, Fabián Andrés, Rodríguez, Eugenio |
| Zdroj: |
Physica Status Solidi (A) - Applications and Materials Science; September 2019, Vol. 216 Issue: 18 |
| Abstrakt: |
Herein, the influence of the germanium (Ge) content on the surface recombination velocity, nonradiative carrier recombination time, and thermal diffusivity of Cu2Zn(SnGe)Se4compound from photoacoustic (PA) measurements is presented. The compounds are synthesized by a sequential thermal evaporation technique and thermal annealing. The order of the metallic stacks deposited on the coated molybdenum glass substrates is Cu/Sn/Cu/Zn/Ge. The thicknesses of Cu(3 nm)/Sn(248 nm)/Cu(112 nm)/Zn (174 nm) are kept constant, and only the thickness of the Ge layer is varied between 10 and 30 nm. The incorporation of germanium shows changes in the aforementioned parameters in dependence of the Ge content. Atomic force microscopy (AFM) as complementary measurements to the PA is carried out. The results are presented and discussed in terms of the influence of Ge content on the properties of the copper zinc tin germanium selenium (CZTGSe) compounds. Herein, the influence of the germanium (Ge) content on the surface recombination velocity, nonradiative carrier recombination time, and thermal diffusivity of Cu2Zn(SnGe)Se4compound from photoacoustic measurements is presented. The compounds are synthesized by a sequential thermal evaporation technique and thermal annealing. The results are discussed in terms of the influence of the Ge content on the properties of the CZTGSe compounds. |
| Databáze: |
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