| Autor: |
Ryu, Sei Hyung, Lichtenwalner, Daniel J., O’Loughlin, Michael, Capell, Craig, Richmond, Jim, van Brunt, Edward, Jonas, Charlotte, Lemma, Yemane, Burk, Al, Hull, Brett, McCain, Matthew, Sabri, Shadi, O'Brien, Heather, Ogunniyi, Aderinto, Lelis, Aivars, Casady, Jeff, Grider, Dave, Allen, Scott, Palmour, John W. |
| Zdroj: |
Materials Science Forum; July 2019, Vol. 963 Issue: 1 p651-654, 4p |
| Abstrakt: |
High performance 15 kV n-GTOs were demonstrated for the first time in 4H-SiC. The device utilized a 140 μm thick, lightly doped n-type drift layer, with 1450°C lifetime enhancement oxidation, which resulted in a carrier lifetime of 17.5 μs. The p+ backside injector layer was thinned to minimize parasitic resistances. A room temperature forward voltage drop of 5.18 V was observed at a current density of 100A/cm2. A 1 cm2 device showed a leakage current of 0.17 μA at 15 kV. The 4H-SiC n-GTO showed latching characteristics, and showed a turn-off time of 170 ns in a resistive load switching setup, which represents about a factor of 45 improvement in turn-off speed over 4H-SiC p-GTOs with comparable voltage and current ratings. |
| Databáze: |
Supplemental Index |
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