| Autor: |
Kumazawa, Teruaki, Okamoto, Mitsuo, Iijima, Miwako, Iwahashi, Yohei, Fujikake, Shinji, Araoka, Tuyoshi, Tawara, Tae, Kimura, Hiroshi, Hamada, Kimimori, Harada, Shinsuke, Okumura, Hajime |
| Zdroj: |
Materials Science Forum; July 2019, Vol. 963 Issue: 1 p469-472, 4p |
| Abstrakt: |
The SiO2/SiC interface quality has a significant effect on the performance of 4H-SiC MOS devices. The introduction of nitrogen to the SiO2/SiC interface is a well-known method for reducing the interface state density (Dit). In this study, we introduced nitrogen to the SiO2/SiC interface by forming SiNx films using atomic layer deposition (ALD) and thus improved the interface quality. O2 annealing with a SiNx interface layer of optimal thickness enhanced the field effect mobility. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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