| Autor: |
Kim, Hong Ki, Kim, Seong Jun, Buettner, Jonas, Lim, Min Who, Erlbacher, Tobias, Bauer, Anton, Koo, Sang Mo, Lee, Nam Suk, Shin, Hoon Kyu |
| Zdroj: |
Materials Science Forum; July 2019, Vol. 963 Issue: 1 p429-432, 4p |
| Abstrakt: |
In this study, Al and N implantation effect on surface properties of 4H-SiC epitaxial layers were investigated before annealing process. AFM results indicated that all implanted samples indicated relatively low RMS roughness values. From UPS and XPS analysis, work function and Si-C binding energy of implanted samples were increased compared to the reference 4H-SiC sample. Those variations may be caused by lattice disorder and amorphization. In addition, TEM image showed damaged area in 4H-SiC epitaxial layer. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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