| Autor: |
Fan, Shizhao, Jung, Daehwan, Sun, Yukun, Li, Brian D., Martin-Martin, Diego, Lee, Minjoo L. |
| Zdroj: |
IEEE Journal of Photovoltaics; 2019, Vol. 9 Issue: 3 p660-665, 6p |
| Abstrakt: |
The highest efficiency heteroepitaxial GaAs solar cells on Si have historically been grown in the p+/n polarity, which was preferred due to the decreased sensitivity of open-circuit voltage in such cells to threading dislocations. The n+/p polarity also has potential advantages due to the higher mobility of electrons than holes in GaAs, and most multi-junction solar cells in the literature are grown in this polarity. Here, we demonstrate n+/p GaAs solar cells on Si with a certified AM1.5G efficiency of 16.8%, approaching the best certified efficiency of 18.1% for p+/n cells in the literature. The high efficiency of our n+/p cells is primarily due to the short-circuit current density of 26.5 mA/cm2, which is significantly higher than prior p+/n record cells. The strong carrier collection results from the use of a highly transparent AlInP window layer, thin n+ emitter, and a relatively high minority electron diffusion length in the p-type base. The high quantum efficiency of these n+/p cells at wavelengths of 700–880 nm makes them promising for future triple-junction devices on Si, where the GaAs will serve as a middle sub-cell. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
