| Autor: |
Chaldyshev, V.V., Astrova, E.V., Lebedev, A.A., Bobrovnikova, I.A., Chernov, N.A., Ivleva, O.M., Lavrentieva, L.G., Teterkina, I.V., Vilisova, M.D. |
| Zdroj: |
Journal of Crystal Growth; January 1995, Vol. 146 Issue: 1-4 p246-250, 5p |
| Abstrakt: |
Isovalent indium doping was employed in order to decrease the deep level concentration in n-type GaAs:S films grown by the vapour phase epitaxy in a chloride system. The EL2 electron trap was found to be the dominant deep level in the films with a low donor concentration. Using isovalent In doping, the concentration of this deep level was reduced from about 1 × 1014cm−3, which was typical of the GaAs:S films, to a value less than the deep level transient spectroscopy (DLTS) sensitivity threshold (< 2.5 × 1012cm−3). In the case of heavily sulphur doped films, a strong decrease in the deep level concentration was detected by photoluminescence when isovalent indium doping was used. The suppression of the deep-level-related lines was accompanied by an enhancement of the band-to-band radiative recombination. All the effects were found to appear in a narrow region close to an indium content of 1 × 1020cm−3. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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