| Abstrakt: |
In this article, we review the application of silicon carbide (SiC) devices, especially diodes, in power-factor correction (PFC) circuits, and we compare various SiC diode designs based on their impact on PFC circuits. Furthermore, we show how device parameters reported in datasheets can be used to estimate the performance of SiC diodes in the surge-current conditions of different durations, and we point to how modifications in PFC circuits can improve performance. These analyses help the designer combine the efficiency advantages of SiC diodes with circuit robustness that might suffer if Si diodes are simply replaced with SiC diodes. |
