| Autor: |
Avramchuk, A V, Komissarov, I V, Mikhalik, M M, Fominski, V Yu, Romanov, R I, Sultanov, A O, Siglovaya, N V, Ryndya, S M, Gusev, A S, Labunov, V A, Kargin, N I |
| Zdroj: |
IOP Conference Series: Materials Science and Engineering; January 2019, Vol. 475 Issue: 1 p012036-012036, 1p |
| Abstrakt: |
In this work, we try to suite an approach, which concerns of epitaxial graphene growth by laser irradiation of 3C-SiC (111) film deposited on silicon substrate (111) by chemical vapor deposition method. Laser treatment was performed by pulsed 1064 nm laser with 20 Hz repetition rate and 15 ns pulse duration, the fluency was varied 0-1.5 J/cm2 . Raman spectroscopy studies show that for fluence above 0.8 J/cm2 2D band is noticeable revealing formation of high crystallographic quality graphitic (graphene) film. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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