| Autor: |
Skocpol, W.J., Voshchenkov, A.M., Howard, R.E., Hu, E.L., Jackel, L.D., Epworth, R.W., Fetter, L.A., Grabbe, P., Tennant, D.M. |
| Zdroj: |
Physica B&C; July 1982, Vol. 109 Issue: 1 p2105-2107, 3p |
| Abstrakt: |
Si MOSFET structures, with channel widths of 20 and 0.5 μm, are used to look for the transition from two-dimensional to one-dimensional behavior in inversion layers. In the wide channels, we find a transition from non-metallic to metallic behavior as the electron concentration in the layer is increased. In the narrow channels, non-metallic behavior is observed regardless of electron concentration. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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