Light and current degradation of a-Si:H pin, nin and pip diodes detected with CPM
| Autor: | Ostendorf, H.-C., Kusian, W., Krühler, W., Schwarz, R. |
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| Zdroj: | Journal of Non-Crystalline Solids; December 1993, Vol. 164 Issue: 1 p659-662, 4p |
| Abstrakt: | Light and current degradation of nin, pip and pin diodes were investigated using CPM and SCLC. We found that degradation can be induced by recombination as well as by hole injection. Excess electrons do not cause any degradation. |
| Databáze: | Supplemental Index |
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