| Abstrakt: |
Resistive heating of molybdenum wires is used for the synthesis of alpha‐MoO3layered nano‐ and microplates. A high density of MoO3plates grow on the surface of the metallic wire in 2–3 min when an electric current density of the order of 104Acm−2flows through the Mo wire. During the current flow, a temperature gradient along the wire appears due to the heat dissipation at the electric contacts at both ends of the wire. The plates grow preferentially in the region heated at 450–500 °C. The synthesized MoO3plates are characterized by micro Raman spectroscopy, scanning electron microscopy, electron backscatter diffraction, cathodoluminescence, and X‐ray photoelectron spectroscopy. In addition, this quick synthesis approach enables the doping of the nanoplates. Setting in contact the Mo wire with Er2O3powders during the resistive heating, Er doping of the resulting MoO3is achieved. The Er incorporation during growth is revealed in the cathodoluminescence spectra of the plates, which show the characteristic emission lines of Er3+ions. Diffusion mechanisms related to the very rapid and effective growth by resistive heating of the undoped and Er doped molybdenum oxide plates, as compared with other thermal methods, are discussed. A quick and alternative method to synthesize MoO3micro‐ and nano‐platesis used. Resistive heating of Mo wires for a few minutes produces a high density of MoO3plates. This method enables the possibility of doping by placing the desired impurity onto the wire surface. In this work, undoped and Er doped MoO3samples produced in this way are characterized by several methods. |
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